公开号 | 申请号 | 标题 | 申请日 | 公开日 | 授权公告日 | 国际分类 | 国际主分类 |
CN112708931A | CN202110084286.6 | 一种热场悬挂单晶炉及方法 | 20210121 | 20210427 |
| C30B 15/00 | C30B 15/20 | C30B 29/06 | B08B 9/087 | C30B |
CN213061104U | CN202022035975.1 | 一种用于碳化硅长晶炉的侧面石墨加热器 | 20200916 | 20210427 | 20210427 | C30B 23/06 | C30B 29/36 | C30B |
CN213061101U | CN202021939515.5 | 一种稳定性强的单晶炉用安装结构 | 20200907 | 20210427 | 20210427 | C30B 15/00 | C30B 29/06 | C30B |
CN213061107U | CN202021747962.0 | 一种用于碳化硅晶片腐蚀装置 | 20200820 | 20210427 | 20210427 | C30B 33/10 | C30B 29/36 | C30B |
CN213061100U | CN202021739311.7 | 一种带分气环的单晶炉炉盖 | 20200819 | 20210427 | 20210427 | C30B 15/00 | C30B 29/06 | C30B |
CN213061105U | CN202021129514.4 | 类单晶铸锭籽晶铺设设备 | 20200617 | 20210427 | 20210427 | C30B 28/06 | C30B 29/06 | C30B |
CN112708933A | CN202011524796.2 | 一种晶体制备方法 | 20200702 | 20210427 |
| C30B 23/00 | C30B 29/36 | C30B |
CN112708934A | CN202011471754.7 | 一种对向靶反应溅射外延Mn4N薄膜的制备方法 | 20201214 | 20210427 |
| C30B 25/06 | C30B 25/16 | C30B 25/18 | C30B 29/38 | C30B |
CN112714804A | CN201980059786.5 | 气相生长装置 | 20191219 | 20210427 |
| C30B 25/14 | H01L 21/205 | C30B 29/38 | C23C 16/34 | C23C 16/448 | C30B |
CN112707731A | CN201911022813.X | 一种提纯多晶硅使用的石墨坩埚 | 20191025 | 20210427 |
| C04B 35/52 | C04B 35/634 | C30B 28/06 | C30B 29/06 | C04B 41/87 | C04B |
CN112695375A | CN202110013638.9 | 一种氧化锆晶体的制备方法 | 20210106 | 20210423 |
| C30B 11/00 | C30B 28/06 | C30B 29/16 | C30B 33/02 | C30B |
CN213037879U | CN202021882152.6 | 一种晶硅制备碳碳坩埚 | 20200902 | 20210423 | 20210423 | C30B 35/00 | C30B 29/06 | C30B |
CN213037873U | CN202021355001.5 | 一种单晶炉生产用输料导流装置 | 20200711 | 20210423 | 20210423 | C30B 15/00 | C30B 29/06 | B65G 65/40 | B65G 69/00 | B07B 1/00 | C30B |
CN213040938U | CN202021354994.4 | 一种多晶硅片生产用晾晒存放装置 | 20200711 | 20210423 | 20210423 | F26B 11/18 | F26B 21/00 | F26B 25/06 | C30B 33/00 | C30B 29/06 | F26B |
CN213037878U | CN202021354983.6 | 一种单晶炉生产用出料后冷却装置 | 20200711 | 20210423 | 20210423 | C30B 35/00 | C30B 29/06 | C30B |
CN213037872U | CN202021250485.7 | 一种水冷导流筒 | 20200630 | 20210423 | 20210423 | C30B 15/00 | C30B 29/06 | C30B |
CN213037844U | CN202021248880.1 | 一种适用于MPCVD的TM022模式微波等离子体反应器 | 20200630 | 20210423 | 20210423 | C23C 16/511 | C23C 16/27 | C23C 16/458 | C30B 29/04 | C30B 25/00 | C23C |
CN213037877U | CN202020954085.8 | 单晶硅棒出炉取棒车 | 20200530 | 20210423 | 20210423 | C30B 35/00 | C30B 29/06 | C30B |
CN112694347A | CN202011577306.5 | 一种具有碳化硅涂层的炭炭复合材料坩埚及制备方法 | 20201228 | 20210423 |
| C04B 41/87 | C30B 15/10 | C30B 29/06 | C04B 35/83 | C04B 35/84 | C04B |
CN112695374A | CN202011527881.4 | 利用电熔α-β氧化铝砖的除尘灰和铝-空气电池废电解液浆料制备莫来石晶须的方法 | 20201222 | 20210423 |
| C30B 9/12 | C30B 29/34 | C30B
29/62 | C01B 33/26 | C30B |
CN112695205A | CN202011488758.6 | 一种铜冶炼渣环保资源化利用的方法 | 20201216 | 20210423 |
| C22B 7/04 | C22B 1/02 | C30B
1/10 | C30B 28/02 | C30B 29/34 | C25C
1/08 | C25C 1/12 | C25C 1/16 | C22B |
CN112695382A | CN202011466532.6 | 基于网格化结构电极提高金刚石异质外延形核均匀性的方法 | 20201214 | 20210423 |
| C30B 25/16 | C30B 25/18 | C30B 29/04 | C30B |
CN112695383A | CN202011442632.5 | 制备闪烁晶体阵列的工艺方法 | 20201208 | 20210423 |
| C30B 28/06 | C30B 33/02 | C30B 29/32 | C30B 29/28 | C30B 29/34 | C30B
29/10 | G01T 1/202 | C30B |
CN112695384A | CN202010531605.9 | 碳化硅晶锭及其制备方法以及碳化硅晶片的制备方法 | 20200611 | 20210423 |
| C30B 29/36 | C30B 29/66 | C30B 23/06 | C30B |
CN112695379A | CN202010531585.5 | 籽晶粘合层、层压体的制备方法及晶片的制备方法 | 20200611 | 20210423 |
| C30B 23/02 | C30B 29/36 | C30B |
CN112680787A | CN202110287392.4 | 一种单晶硅的生长方法及单晶硅 | 20210317 | 20210420 |
| C30B 15/04 | C30B 15/20 | C30B 29/06 | C30B |
CN112680783A | CN202110092114.3 | 焰熔法生长金红石单晶体的原料生产筛选设备及操作方法 | 20210123 | 20210420 |
| C30B 11/10 | C30B 29/16 | C30B 35/00 | C30B |
CN213026072U | CN202022505172.8 | 一种晶舟 | 20201103 | 20210420 | 20210420 | H01L 21/673 | C30B 29/06 | C30B 33/02 | H01L |
CN213013165U | CN202021970769.3 | 拉晶炉 | 20200910 | 20210420 | 20210420 | C30B 15/00 | C30B 15/20 | C30B 29/06 | C30B |
CN213013168U | CN202021598849.0 | 一种扩散炉 | 20200804 | 20210420 | 20210420 | C30B 31/16 | C30B 29/06 | H01L 31/18 | H01L 31/028 | H01L 31/06 | C30B |
CN112687764A | CN202011583974.9 | 一种单晶电池的制绒方法及由其制备的单晶电池 | 20201228 | 20210420 |
| H01L 31/18 | H01L 31/068 | H01L 31/0236 | H01L 21/02 | C30B 33/10 | C30B
29/06 | H01L |
CN112687770A | CN202011547207.2 | LED外延生长方法 | 20201224 | 20210420 |
| H01L 33/00 | H01L 33/06 | H01L 33/12 | H01L 33/14 | C30B 25/00 | C30B
25/02 | C30B 29/16 | C30B 29/40 | C30B 31/06 | C30B 33/02 | H01L |
CN112680705A | CN202011471090.4 | 具有室温拓扑霍尔效应的外延Pt/γ′-Fe4N/MgO异质结构及制备方法 | 20201214 | 20210420 |
| C23C 14/35 | C23C 14/06 | C23C 14/18 | C30B 23/02 | C30B 29/38 | C23C |
CN112680780A | CN202011443881.6 | 氧化镓晶体生长装置及生长方法 | 20201208 | 20210420 |
| C30B 11/00 | C30B 29/16 | C30B |
CN112680786A | CN202011398357.1 | 用于硅锭的柴氏生长的侧边进料系统 | 20120413 | 20210420 |
| C30B 15/00 | C30B 15/10 | C30B 15/02 | C30B 29/06 | C30B |
CN213013166U | CN201922265635.5 | 上方取坩埚的长晶炉 | 20191216 | 20210420 | 20210420 | C30B 23/00 | C30B 29/36 | C30B |
CN112680784A | CN201910992640.8 | 单晶炉及利用该单晶炉制备晶棒的方法 | 20191018 | 20210420 |
| C30B 15/00 | C30B 15/20 | C30B 15/14 | C30B 29/06 | C30B |
CN112680788A | CN201910990351.4 | 一种半导体晶体生长装置 | 20191017 | 20210420 |
| C30B 15/14 | C30B 30/04 | C30B 29/06 | C30B |
CN112680793A | CN201910990349.7 | 一种半导体晶体生长装置 | 20191017 | 20210420 |
| C30B 30/04 | C30B 15/00 | C30B 29/06 | C30B |
CN212983096U | CN202021909852.X | 一种用于直拉单晶硅炉的排气罩 | 20200903 | 20210416 | 20210416 | C30B 15/00 | C30B 29/06 | C30B |
CN212983095U | CN202021909851.5 | 一种用于直拉法单晶硅生长装置的导流筒 | 20200903 | 20210416 | 20210416 | C30B 15/00 | C30B 29/06 | C30B |
CN212983094U | CN202021909445.9 | 一种单晶硅生产加工拉晶炉的冷却装置 | 20200903 | 20210416 | 20210416 | C30B 15/00 | C30B 29/06 | C30B |
CN112663137A | CN202011573642.2 | 一种硅反外延片的制备方法 | 20201228 | 20210416 |
| C30B 25/02 | C30B 23/02 | C30B 28/14 | C30B 29/06 | H01L 21/02 | H01L
31/18 | C30B |
CN112656992A | CN202011573500.6 | 一种聚醚醚酮硬硅钙石晶须复合材料骨修复支架的制备方法 | 20201225 | 20210416 |
| A61L 27/44 | A61L 27/50 | A61L 27/54 | C08G 8/02 | C30B
7/10 | C30B 29/34 | C30B 29/62 | A61L |
CN112663005A | CN202011485795.1 | 多晶硅还原炉内壁镀膜装置及方法 | 20201216 | 20210416 |
| C23C 14/34 | C23C 14/14 | C30B 28/06 | C30B 29/06 | C23C |
CN112663136A | CN202011405558.X | 碳化硅晶体生长方法及生长装置 | 20201202 | 20210416 |
| C30B 23/00 | C30B 29/36 | C30B |
CN112663145A | CN202011398354.8 | 一种去除LPCVD多晶硅绕镀的装置及方法 | 20201204 | 20210416 |
| C30B 33/12 | C30B 29/06 | H01L 31/18 | C30B |
CN112663134A | CN202011373845.7 | 一种双温区独立控制的碳化硅单晶生长装置和生长方法 | 20201130 | 20210416 |
| C30B 23/00 | C30B 29/36 | C30B |
CN112663138A | CN202011194799.4 | 半导体晶圆外延生长装置及其工作方法 | 20201030 | 20210416 |
| C30B 25/08 | C30B 25/12 | C30B 25/16 | C30B 25/18 | C30B 25/20 | C30B
28/14 | C30B 29/36 | H01L 21/66 | H01L 21/67 | C30B |
CN112673535A | CN201980057302.3 | 表面发射激光器元件及制造表面发射激光器元件的方法 | 20190829 | 20210416 |
| H01S 5/183 | C30B 25/18 | C30B
29/38 | H01S 5/323 | H01L 21/365 | H01S |
CN212955437U | CN202021779257.9 | 可拆卸托杆 | 20200824 | 20210413 | 20210413 | C30B 15/00 | C30B 29/06 | C30B |
CN212967611U | CN202021655876.7 | 一种半导体硅片局部掺杂装置 | 20200811 | 20210413 | 20210413 | H01L 21/67 | H01L 31/18 | C30B 31/06 | C30B 29/06 | H01L |
CN212955439U | CN202021462606.4 | 一种用于太阳能单晶硅生产的异型复合式加热装置 | 20200722 | 20210413 | 20210413 | C30B 15/14 | C30B 29/06 | C30B |
CN212955441U | CN202021344664.7 | 一种长外延片的反应室结构 | 20200710 | 20210413 | 20210413 | C30B 25/08 | C30B 25/10 | C30B 29/06 | H01L 21/67 | C30B |
CN212955435U | CN202021311464.1 | 一种改善区熔硅单晶电阻率均匀性的掺杂线圈 | 20200707 | 20210413 | 20210413 | C30B 13/12 | C30B 29/06 | C30B |
CN212955444U | CN202020839225.7 | 多尺寸坩埚植砂设备 | 20200519 | 20210413 | 20210413 | C30B 28/06 | C30B 29/06 | C30B |
CN212955443U | CN202020760911.5 | 一种拉晶系统 | 20200509 | 20210413 | 20210413 | C30B 27/02 | C30B 29/06 | C30B |
CN112647126A | CN202011393749.9 | 用于大颗粒MPCVD单晶金刚石控温连续生长的内嵌式水冷台及其应用 | 20201202 | 20210413 |
| C30B 25/12 | C30B 25/16 | C30B 29/04 | C30B |
CN112647122A | CN202011335456.5 | 一种铸造单晶的热场结构及其方法 | 20201125 | 20210413 |
| C30B 11/00 | C30B 29/06 | C30B 33/02 | C30B |
CN112647130A | CN202011306035.X | 一种低压化学气相沉积生长氧化镓薄膜的方法 | 20201120 | 20210413 |
| C30B 29/16 | C30B 33/02 | C30B 25/16 | C30B 25/14 | C30B |
CN112647127A | CN202011272924.9 | 金属辅助控制CVD生长单晶金刚石位错延伸的结构及其制备方法和应用 | 20201113 | 20210413 |
| C30B 25/20 | C30B 25/18 | C30B 29/04 | C30B 25/16 | C23C 16/511 | C23C
16/06 | C30B |
CN112647128A | CN202011014852.8 | 一种用于新型玻璃材料的积淀生长装置 | 20200924 | 20210413 |
| C30B 29/06 | C30B 23/00 | C30B |
CN112647135A | CN202010978877.3 | 一种自动定位式传感器单晶硅刻蚀装置 | 20200917 | 20210413 |
| C30B 33/12 | C30B 29/06 | C30B |
CN112654581A | CN201980042756.3 | 在其一个表面上具有纳米结构以产生结构颜色的金刚石及生产其的方法 | 20190617 | 20210413 |
| C01B 32/28 | C30B 33/08 | B82Y 40/00 | C30B 29/04 | C01B |
CN212925229U | CN202021833289.2 | 碳化硅晶体退火坩埚及退火装置 | 20200827 | 20210409 | 20210409 | C30B 33/02 | C30B 29/36 | C30B |
CN212916379U | CN202021480074.7 | 一种硅棒拼接用自动涂胶机构 | 20200724 | 20210409 | 20210409 | B05C 11/10 | B05C 9/12 | C30B
33/06 | C30B 29/06 | B05C |
CN212925225U | CN202021470307.5 | 单晶炉用水冷环及单晶炉上部导热系统 | 20200723 | 20210409 | 20210409 | C30B 15/00 | C30B 29/06 | C30B |
CN212925227U | CN202021038359.5 | 一种加热器 | 20200608 | 20210409 | 20210409 | C30B 15/14 | C30B 29/06 | C30B |
CN212925224U | CN202021029147.0 | 一种换热装置及单晶炉 | 20200605 | 20210409 | 20210409 | C30B 15/00 | C30B 29/06 | C30B |
CN212925228U | CN202020951126.8 | 一种用于扩散炉排风口的分流装置 | 20200529 | 20210409 | 20210409 | C30B 31/16 | C30B 29/06 | C30B |
CN212925226U | CN202020938327.4 | 一种石英坩埚、坩埚模具、成型件和成型装置 | 20200528 | 20210409 | 20210409 | C30B 15/10 | C30B 29/06 | B28B
7/00 | C30B |
CN112626610A | CN202011641329.8 | 一种单晶炉漏硅后快速引流装置 | 20201231 | 20210409 |
| C30B 15/00 | C30B 29/06 | C30B |
CN112624119A | CN202011614500.6 | 碳化硅粉体、其制备方法和应用及反应装置 | 20201230 | 20210409 |
| C01B 32/963 | C30B 35/00 | C30B 29/36 | C01B |
CN112626616A | CN202011526691.0 | 一种弹性晶片的制造方法 | 20201222 | 20210409 |
| C30B 29/06 | C30B 15/00 | C30B |
CN112626612A | CN202011494554.3 | 直拉单晶炉加热器 | 20201217 | 20210409 |
| C30B 15/14 | C30B 29/06 | C30B |
CN112626621A | CN202011473237.3 | 一种在横向超导磁场中应用的热场及长晶方法 | 20201215 | 20210409 |
| C30B 30/04 | C30B 15/14 | C30B 29/06 | C30B |
CN112626609A | CN202011470743.7 | 一种可调节半导体单晶硅熔液对流的热场及单晶炉 | 20201215 | 20210409 |
| C30B 15/00 | C30B 29/06 | C30B |
CN112626614A | CN202011461134.5 | 一种用于铸锭类超高纯涂层石英坩埚及其制备方法 | 20201211 | 20210409 |
| C30B 28/06 | C30B 29/06 | C30B |
CN112624782A | CN202011456779.X | 一种埚帮涂层的使用方法 | 20201211 | 20210409 |
| C04B 35/83 | C04B 35/84 | C30B 15/10 | C30B 29/06 | C04B |
CN112626615A | CN202011449293.3 | 一种半导体分立器用硅外延生长扩散辅助设备 | 20201209 | 20210409 |
| C30B 29/06 | C30B 25/02 | C30B 25/14 | H01L 21/02 | C30B |
CN112626623A | CN202011419529.9 | 一种带有定位机构的长晶炉及装炉方法 | 20201207 | 20210409 |
| C30B 35/00 | C30B 29/36 | C30B 29/06 | F21V 33/00 | G01B 21/18 | C30B |
CN112626608A | CN202011388212.3 | 一种单晶硅直拉炉用炭/炭拼接保温筒及其制造方法 | 20201201 | 20210409 |
| C30B 15/00 | C30B 29/06 | C23C 16/26 | C23C 16/56 | C04B 41/87 | C30B |
CN112626619A | CN202011344165.2 | 一种碳化硅单晶锭、衬底及其制备方法 | 20201126 | 20210409 |
| C30B 29/36 | C30B 23/00 | H01L 29/16 | H01L 29/30 | C30B |
CN112626618A | CN202011015571.4 | 碳化硅单晶晶片及碳化硅单晶锭的制造方法 | 20200924 | 20210409 |
| C30B 29/36 | C30B 25/00 | C30B |
CN112640071A | CN201980057224.7 | 硅试样的碳浓度评价方法、硅晶片制造工序的评价方法、硅晶片的制造方法和硅单晶锭的制造方法 | 20190830 | 20210409 |
| H01L 21/66 | C30B 15/00 | C30B 29/06 | H01L |
CN112640070A | CN201980057209.2 | 硅试样的碳浓度评价方法、硅晶片制造工序的评价方法、硅晶片的制造方法和硅单晶锭的制造方法 | 20190830 | 20210409 |
| H01L 21/66 | C30B 15/00 | C30B 29/06 | H01L |
CN112639174A | CN201980056925.9 | 生长半绝缘碳化硅单晶锭的方法和用于生长碳化硅单晶锭的装置 | 20190726 | 20210409 |
| C30B 23/00 | C30B 29/36 | C30B 35/00 | C30B 15/04 | C30B 15/36 | C30B
15/14 | C30B 15/20 | C30B |
CN112639176A | CN201980056306.X | 单晶培育方法 | 20190610 | 20210409 |
| C30B 29/06 | C30B 15/00 | C30B |
CN112639179A | CN201980056250.8 | 氮化物半导体基板的制造方法、氮化物半导体基板和层叠结构体 | 20190822 | 20210409 |
| C30B 29/38 | C30B 25/04 | C30B |
CN112639178A | CN201980056200.X | 氮化物半导体基板、氮化物半导体基板的制造方法和层叠结构体 | 20190822 | 20210409 |
| C30B 29/38 | C30B 23/02 | C30B |
CN112640123A | CN201980055915.3 | 氮化物半导体器件及其基板、和稀土元素添加氮化物层的形成方法、以及红色发光器件及其制造方法 | 20190830 | 20210409 |
| H01L 29/207 | H01L 21/205 | H01L 21/338 | H01L 29/778 | H01L 29/812 |
C30B 25/16 | C30B 29/38 | H01L |
CN112639177A | CN201980053250.2 | SiC单晶、SiC晶锭的制造方法和SiC晶片的制造方法 | 20190813 | 20210409 |
| C30B 29/36 | C30B 23/02 | C30B |
CN112639175A | CN201880095845.X | 单晶硅的培育方法 | 20180823 | 20210409 |
| C30B 29/06 | C30B |
CN212895091U | CN202021879236.4 | 一种单晶炉硅液的防泄漏结构 | 20200901 | 20210406 | 20210406 | C30B 35/00 | C30B 29/06 | G08B
3/10 | C30B |
CN212895074U | CN202021782403.3 | 换热装置 | 20200824 | 20210406 | 20210406 | C30B 15/00 | C30B 29/06 | C30B |
CN212895078U | CN202021761560.6 | 一种用于单晶炉加料器的挂件结构 | 20200821 | 20210406 | 20210406 | C30B 15/02 | C30B 29/06 | C30B |
CN212895077U | CN202021732515.8 | 底部结构及加料器 | 20200819 | 20210406 | 20210406 | C30B 15/02 | C30B 29/06 | C30B |
CN212895087U | CN202021683814.7 | 导流筒提升装置及单晶炉 | 20200813 | 20210406 | 20210406 | C30B 29/06 | C30B 15/00 | C30B |
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